Name of the speaker: Dr. Anlian Pan
Position: Head of Key Lab for Micro-Nano Physics and Technology                                   
Organization: Hunan University
 Nationality: China

The Title of Speech: Band gap Engineering and Heterostructures: From 1D to 2D Semiconductor Systems
Biography of the Speaker: Anlian Pan received his PhD in Condensed Mater Physics from the Institute of Physics, Chinese Academy of Sciences, in 2006. From 2006 to 2007, he worked as a Humboldt Research Fellow at the Max Planck Institute of Microstructure Physics. Later in 2007, he joined Arizona State University as a Postdoctoral Fellow, where he became a Research Assistant Professor. He is currently a Professor of Physics and Material Science in Hunan University, and is the director of the Key Laboratory for Micro-Nano Physics and Technology of Hunan Province. His main research interests lie in controlled growth and integrated photonics device applications of low-dimensional semiconductor nanostructures. He has published over 140 papers in the international Journals, with more than 30 papers in the top Journals, like Physical Review Letters, Nature Nanotechnology, Chem. Soc. Rev., J. Am. Chem. Soc., Adv. Mater and Nano Letters.
 Abstract of Speech: Band gaps are one of the most important parameters of semiconductor materials for their optoelectronic applications since they determine the spectral features of absorptions and emission processes. Due to the limited band gaps of natural semiconductors, alloying and heterostructured semiconductors with different band gaps have long been the standard methods of achieving semiconductor structures with new band gaps and functions. In this talk, I will report our recent progress on the band gap engineering of 1D semiconductor nanowires and 2D atomically thin layered materials. Using some examples, I will show how to realize composition graded and interface sharped low dimensional semiconductor heterostructures through composition controlled band gap modulation. The achieved band gap engineered nanostructures can give continuously tuned or white light emission, and can be used to realize multi-color nanolasers, wavelength splitter, asymmetric waveguiding and high-performance photodetectors etc.